Invention Grant
US08759915B2 Semiconductor field-effect transistor, memory cell and memory device
有权
半导体场效应晶体管，存储单元和存储器件
- Patent Title: Semiconductor field-effect transistor, memory cell and memory device
- Patent Title (中): 半导体场效应晶体管，存储单元和存储器件
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Application No.: US12293534Application Date: 2006-03-20
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Publication No.: US08759915B2Publication Date: 2014-06-24
- Inventor: Paolo Rolandi , Cristiano Calligaro , Luigi Pascucci
- Applicant: Paolo Rolandi , Cristiano Calligaro , Luigi Pascucci
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- International Application: PCT/IT2006/000170 WO 20060320
- International Announcement: WO2007/108017 WO 20070927
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Semiconductor device formed by a first conductive strip of semiconductor material; a control gate region of semiconductor material, facing a channel portion of the first conductive strip, and an insulation region arranged between the first conductive strip and the control gate region. The first conductive strip includes a conduction line having a first conductivity type and a control line having a second conductivity type, arranged adjacent and in electrical contact with each other, and the conduction line forms the channel portion, a first conduction portion and a second conduction portion arranged on opposite sides of the channel portion.
Public/Granted literature
- US20100213529A1 SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, MEMORY CELL AND MEMORY DEVICE Public/Granted day:2010-08-26
Information query
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