Invention Grant
- Patent Title: Thin-film transistor having etch stop multi-layer and method of manufacturing the same
- Patent Title (中): 具有蚀刻停止多层的薄膜晶体管及其制造方法
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Application No.: US12929066Application Date: 2010-12-28
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Publication No.: US08759917B2Publication Date: 2014-06-24
- Inventor: Joon Seok Park , Tae Sang Kim , Yun-Hyuk Choi
- Applicant: Joon Seok Park , Tae Sang Kim , Yun-Hyuk Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0000189 20100104; KR10-2010-0101875 20101019
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
A thin-film transistor (TFT) may include a channel layer, an etch stop multi-layer, a source, a drain, a gate, and a gate insulation layer. The etch stop multi-layer may include a first etch stop layer and a second etch stop layer. The second etch stop layer may prevent or reduce an etchant from contacting the channel layer.
Public/Granted literature
- US20110163310A1 Thin-film transistor having etch stop multi-layer and method of manufacturing the same Public/Granted day:2011-07-07
Information query
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