Invention Grant
- Patent Title: Backside illuminated image sensor with stressed film
- Patent Title (中): 具有应力膜的背面照明图像传感器
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Application No.: US13649953Application Date: 2012-10-11
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Publication No.: US08759934B2Publication Date: 2014-06-24
- Inventor: Hsin-Chih Tai , Howard E. Rhodes , Wei Zheng , Vincent Venezia , Yin Qian , Duli Mao
- Applicant: Omnivision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.
Public/Granted literature
- US20130032921A1 BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM Public/Granted day:2013-02-07
Information query
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