Invention Grant
- Patent Title: Semiconductor arrangement with active drift zone
- Patent Title (中): 具有主动漂移区的半导体装置
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Application No.: US13362033Application Date: 2012-01-31
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Publication No.: US08759939B2Publication Date: 2014-06-24
- Inventor: Rolf Weis
- Applicant: Rolf Weis
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dresden
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L27/00
- IPC: H01L27/00

Abstract:
A semiconductor device arrangement includes a semiconductor layer and at least one series circuit with a first semiconductor device and a plurality of n second semiconductor devices, with n>1. The first semiconductor device has a load path and active device regions integrated in the semiconductor layer. Each second semiconductor device has active device regions integrated in the semiconductor layer and a load path between a first and second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each second semiconductor device has its control terminal connected to the load terminal of one of the other second semiconductor devices. One of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. The arrangement further includes an edge termination structure.
Public/Granted literature
- US20130193512A1 Semiconductor Arrangement with Active Drift Zone Public/Granted day:2013-08-01
Information query
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