Invention Grant
- Patent Title: Wafer backside structures having copper pillars
- Patent Title (中): 具有铜柱的晶片背面结构
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Application No.: US12708287Application Date: 2010-02-18
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Publication No.: US08759949B2Publication Date: 2014-06-24
- Inventor: Chen-Hua Yu , Hon-Lin Huang , Kuo-Ching Hsu , Chen-Shien Chen
- Applicant: Chen-Hua Yu , Hon-Lin Huang , Kuo-Ching Hsu , Chen-Shien Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/48 ; H01L23/52 ; H01L21/44

Abstract:
An integrated circuit structure includes a semiconductor substrate having a front side and a backside, and a conductive via penetrating the semiconductor substrate. The conductive via includes a back end extending to the backside of the semiconductor substrate. A redistribution line (RDL) is on the backside of the semiconductor substrate and electrically connected to the back end of the conductive via. A passivation layer is over the RDL, with an opening in the passivation layer, wherein a portion of the RDL is exposed through the opening. A copper pillar has a portion in the opening and electrically connected to the RDL.
Public/Granted literature
- US20100276787A1 Wafer Backside Structures Having Copper Pillars Public/Granted day:2010-11-04
Information query
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