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US08759950B2 Radio- and electromagnetic interference through-silicon vias for stacked-die packages, and methods of making same 有权
用于堆叠管芯封装的无线电和电磁干扰硅通孔及其制造方法

  • Patent Title: Radio- and electromagnetic interference through-silicon vias for stacked-die packages, and methods of making same
  • Patent Title (中): 用于堆叠管芯封装的无线电和电磁干扰硅通孔及其制造方法
  • Application No.: US13101874
    Application Date: 2011-05-05
  • Publication No.: US08759950B2
    Publication Date: 2014-06-24
  • Inventor: Telesphor Kamgaing , Valluri R. Rao
  • Applicant: Telesphor Kamgaing , Valluri R. Rao
  • Applicant Address: US CA Santa Clara
  • Assignee: Intel Corporation
  • Current Assignee: Intel Corporation
  • Current Assignee Address: US CA Santa Clara
  • Agent John N. Greaves
  • Main IPC: H01L29/40
  • IPC: H01L29/40
Radio- and electromagnetic interference through-silicon vias for stacked-die packages, and methods of making same
Abstract:
An apparatus includes a radio-frequency die with shielding through-silicon vias and a die backside lattice lid that shield a sector in the RF die from radio- and electromagnetic interference.
Abstract(Chinese):

一种装置包括具有屏蔽通硅通孔的射频管芯和屏蔽RF管芯中的扇区的模具背面格栅盖与放射和电磁干扰。

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