Invention Grant
US08759957B2 Film for use in manufacturing semiconductor device, method for producing semiconductor device and semiconductor device
有权
用于制造半导体器件的膜，用于制造半导体器件的方法和半导体器件
- Patent Title: Film for use in manufacturing semiconductor device, method for producing semiconductor device and semiconductor device
- Patent Title (中): 用于制造半导体器件的膜，用于制造半导体器件的方法和半导体器件
-
Application No.: US12866108Application Date: 2009-02-06
-
Publication No.: US08759957B2Publication Date: 2014-06-24
- Inventor: Takashi Hirano
- Applicant: Takashi Hirano
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Bakelite Company Limited
- Current Assignee: Sumitomo Bakelite Company Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell LLP
- Priority: JP2008-028220 20080207; JP2008-085439 20080328; JP2008-167547 20080626
- International Application: PCT/JP2009/052075 WO 20090206
- International Announcement: WO2009/099191 WO 20090813
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
A film for use in manufacturing a semiconductor device having at least one semiconductor element of the present invention is characterized by comprising: a base sheet having one surface; and a bonding layer provided on the one surface of the base sheet, the bonding layer being adapted to be bonded to the semiconductor element in the semiconductor device, the bonding layer being formed of a resin composition comprising a crosslinkable resin and a compound having flux activity. Further, it is preferred that in the film of the present invention, the semiconductor element is of a flip-chip type and has a functional surface, and the bonding layer is adapted to be bonded to the functional surface of the semiconductor element.
Public/Granted literature
Information query
IPC分类:
