Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12361979Application Date: 2009-01-29
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Publication No.: US08759983B2Publication Date: 2014-06-24
- Inventor: Makoto Wada , Akihiro Kajita , Kazuyuki Higashi
- Applicant: Makoto Wada , Akihiro Kajita , Kazuyuki Higashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-020373 20080131
- Main IPC: H01L29/41
- IPC: H01L29/41

Abstract:
A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a connecting member formed above the semiconductor substrate configured to electrically connect upper and lower conductive members; a first insulating film formed in the same layer as the connecting member; a wiring formed on the connecting member, the wiring including a first region and a second region, the first region contacting with a portion of an upper surface of the connecting member, and the second region located on the first region and having a width greater than that of the first region; and a second insulating film formed on the first insulating film so as to contact with at least a portion of the first region of the wiring and with a bottom surface of the second region.
Public/Granted literature
- US20090206491A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-08-20
Information query
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