Invention Grant
US08760053B2 Power supply control device, plasma processing device, and plasma processing method
有权
电源控制装置,等离子体处理装置和等离子体处理方法
- Patent Title: Power supply control device, plasma processing device, and plasma processing method
- Patent Title (中): 电源控制装置,等离子体处理装置和等离子体处理方法
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Application No.: US13198356Application Date: 2011-08-04
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Publication No.: US08760053B2Publication Date: 2014-06-24
- Inventor: Hideo Eto , Nobuyasu Nishiyama , Makoto Saito , Keiji Suzuki
- Applicant: Hideo Eto , Nobuyasu Nishiyama , Makoto Saito , Keiji Suzuki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2010-180433 20100811; JP2011-103631 20110506
- Main IPC: H05B31/26
- IPC: H05B31/26 ; H03H7/38

Abstract:
According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information.
Public/Granted literature
- US20120038277A1 POWER SUPPLY CONTROL DEVICE, PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD Public/Granted day:2012-02-16
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