Invention Grant
US08760053B2 Power supply control device, plasma processing device, and plasma processing method 有权
电源控制装置,等离子体处理装置和等离子体处理方法

Power supply control device, plasma processing device, and plasma processing method
Abstract:
According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information.
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