Invention Grant
US08760135B2 High-efficiency base-driver circuit for power bipolar junction transistors
有权
用于功率双极结型晶体管的高效率基极驱动电路
- Patent Title: High-efficiency base-driver circuit for power bipolar junction transistors
- Patent Title (中): 用于功率双极结型晶体管的高效率基极驱动电路
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Application No.: US13781510Application Date: 2013-02-28
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Publication No.: US08760135B2Publication Date: 2014-06-24
- Inventor: Charles R. Sullivan , Michael Teroerde
- Applicant: The Trustees of Dartmouth College
- Applicant Address: US NH Hanover
- Assignee: The Trustees of Dartmouth College
- Current Assignee: The Trustees of Dartmouth College
- Current Assignee Address: US NH Hanover
- Agency: Lathrop & Gage LLP
- Main IPC: G05F1/56
- IPC: G05F1/56

Abstract:
A system or module has a 3-or-more layer current-controlled switching device, such as a bipolar power transistor, for driving a load and a base driver circuit coupled to drive it. The driver has a buck-converter configuration for efficiently driving the switching device. In an embodiment, the driver has an inductor, the inductor having a first terminal coupled to a base of the bipolar junction transistor, a high-side switching device coupled to drive a second terminal of the inductor; and a rectification device coupled to the second terminal of the inductor. The driver also has a control circuit for providing a sequence of pulses through the high-side switching device when a control signal indicates the bipolar junction transistor is to be turned on.
Public/Granted literature
- US20130176010A1 High-Efficiency Base-Driver Circuit For Power Bipolar Junction Transistors Public/Granted day:2013-07-11
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