Invention Grant
- Patent Title: Display device having a light emitting element
- Patent Title (中): 具有发光元件的显示装置
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Application No.: US11121587Application Date: 2005-05-04
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Publication No.: US08760374B2Publication Date: 2014-06-24
- Inventor: Mitsuaki Osame , Aya Anzai , Yu Yamazaki
- Applicant: Mitsuaki Osame , Aya Anzai , Yu Yamazaki
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2004-152543 20040521
- Main IPC: G09G3/32
- IPC: G09G3/32

Abstract:
When a thin film transistor has an LDD structure or a double gate structure, the number of manufacturing steps increases, which may decrease the yield. The invention provides a display device where the influence of off current is reduced by a method different from the conventional one. According to the invention, a pass element is provided at one electrode of a light emitting element so as not to flow the off current of a transistor for driving the light emitting element through the light emitting element in a non-lighting period. The pass element allows the off current to flow outside, that is, the off current can be bypassed outside through the pass element.
Public/Granted literature
- US20050259093A1 Display device Public/Granted day:2005-11-24
Information query
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