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US08760545B2 Solid-state imaging device, manufacturing method therefor, solid-state imaging apparatus, and image capturing apparatus 失效
固态成像装置及其制造方法，固体摄像装置和摄像装置

  • Patent Title: Solid-state imaging device, manufacturing method therefor, solid-state imaging apparatus, and image capturing apparatus
  • Patent Title (中): 固态成像装置及其制造方法，固体摄像装置和摄像装置
  • Application No.: US13154004
    Application Date: 2011-06-06
  • Publication No.: US08760545B2
    Publication Date: 2014-06-24
  • Inventor: Kaori Takimoto
  • Applicant: Kaori Takimoto
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Dentons US LLP
  • Priority: JP2010-153640 20100706
  • Main IPC: H04N3/14
  • IPC: H04N3/14 ;  H04N5/335 ;  H01L27/148 ;  H01L21/00
Solid-state imaging device, manufacturing method therefor, solid-state imaging apparatus, and image capturing apparatus
Abstract:
A solid-state imaging device includes: a semiconductor substrate that has a light sensing portion which photoelectrically converts incident light; an infrared cut filter layer or a light shielding layer that is provided on a surface side opposite to a light receiving surface of the semiconductor substrate and is formed on substantially the entire surface of an area corresponding to an area in which the light sensing portion of the semiconductor substrate is formed; and a wiring layer that is provided on an upper layer of the infrared cut filter layer or the light shielding layer.
Abstract(Chinese):

一种固态成像装置，包括：半导体基板，具有对入射光进行光电转换的感光部; 红外截止滤光层或遮光层，其设置在与半导体基板的受光面相反侧的表面侧，并且形成在与所述半导体基板的光检测部的区域对应的区域的大致整个表面上 形成半导体衬底; 以及设置在红外截止滤光层或遮光层的上层的布线层。

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