Invention Grant
US08760818B1 Systems and methods for providing magnetic storage elements with high magneto-resistance using heusler alloys
有权
使用heusler合金提供具有高磁阻的磁存储元件的系统和方法
- Patent Title: Systems and methods for providing magnetic storage elements with high magneto-resistance using heusler alloys
- Patent Title (中): 使用heusler合金提供具有高磁阻的磁存储元件的系统和方法
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Application No.: US13737374Application Date: 2013-01-09
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Publication No.: US08760818B1Publication Date: 2014-06-24
- Inventor: Zhitao Diao , Qunwen Leng
- Applicant: Western Digital (Fremont), LLC
- Applicant Address: US CA Fremont
- Assignee: Western Digital (Fremont), LLC
- Current Assignee: Western Digital (Fremont), LLC
- Current Assignee Address: US CA Fremont
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
Systems and methods for providing magnetic storage elements with high magneto-resistance using Heusler alloys are provided. One such method includes depositing a substrate including NiFe, depositing a seed layer on the substrate, depositing a buffer layer on the seed layer, and growing, epitaxially, an upper layer on the buffer layer, the upper layer including a Heusler alloy.
Information query
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