Invention Grant
- Patent Title: Electro-static discharge clamp (ESD) for NxVDD power rail
- Patent Title (中): 用于NxVDD电源轨的静电放电钳（ESD）
-
Application No.: US13415621Application Date: 2012-03-08
-
Publication No.: US08760828B2Publication Date: 2014-06-24
- Inventor: Wei Yu Ma
- Applicant: Wei Yu Ma
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H02H3/22
- IPC: H02H3/22
Abstract:
A circuit with an electro-static discharge clamp coupled to a first power source and second power source. The electro-static discharge clamp includes an NMOS stack and an electro-static discharge detector. The NMOS stack has a first NMOS transistor with gate node ng1 and a second NMOS transistor with gate node ng2. The electro-static discharge detector is configured to control the NMOS stack, and may include three switches. A first switch is configured to switch the gate node ng1 to the second power source. A second switch is configured to switch the gate node ng1 to the gate node ng2. A third switch is configured to switch the gate node ng1 to the ground.
Public/Granted literature
- US20130235497A1 ELECTRO-STATIC DISCHARGE CLAMP (ESD) FOR NxVDD POWER RAIL Public/Granted day:2013-09-12
Information query
