Invention Grant
- Patent Title: Low-impedance high-swing power supply with integrated high positive and negative DC voltage protection and electro-static discharge (ESD) protection
- Patent Title (中): 低阻抗高压摆动电源具有集成的高正，负直流电压保护和静电放电（ESD）保护
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Application No.: US13437352Application Date: 2012-04-02
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Publication No.: US08760829B2Publication Date: 2014-06-24
- Inventor: Liang Wang , Weibiao Zhang , Dening Wang , John Eric Kunz, Jr.
- Applicant: Liang Wang , Weibiao Zhang , Dening Wang , John Eric Kunz, Jr.
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Alan A. R. Cooper; W. James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H02H9/00
- IPC: H02H9/00
Abstract:
An apparatus comprises a first PFET including a first intrinsic body diode; an electrostatic discharge (ESD) subcircuit coupled to a source of the first PFET; a reverse bias voltage element, such as a zener diode, an anode of which is coupled to a gate of the first PFET; a second PFET having a source coupled to a cathode of the zener diode a capacitor coupled to a gate the second PFET; and a first resistor coupled to the gate of the second PFET. The apparatus can protect against both positive and negative electro static transient discharge events.
Public/Granted literature
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