Invention Grant
- Patent Title: Capacitive device and method for fabricating the same
- Patent Title (中): 电容装置及其制造方法
-
Application No.: US13560318Application Date: 2012-07-27
-
Publication No.: US08760843B2Publication Date: 2014-06-24
- Inventor: Jong Taek Hwang , Han Choon Lee , Oh Jin Jung , Jin Youn Cho
- Applicant: Jong Taek Hwang , Han Choon Lee , Oh Jin Jung , Jin Youn Cho
- Applicant Address: KR Bucheon
- Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee Address: KR Bucheon
- Agency: Murabito Hao & Barnes LLP
- Agent Andrew D. Fortney
- Priority: KR10-2012-0054596 20120523
- Main IPC: H01G4/30
- IPC: H01G4/30 ; H01G4/005 ; H01G4/228 ; H01G4/40

Abstract:
A capacitive device includes a first capacitor including a first wiring layer, a first dielectric film, a first conductive layer, a first insulating layer on the first capacitor, a second capacitor on the first insulating layer including a second conductive layer, a second dielectric film, and a third conductive layer, a second insulating layer on the second capacitor, a second wiring layer on the second insulating layer including first and second connection wires, a first via connecting the first wiring layer to the second conductive layer, a second via connecting the third conductive layer to the second wiring layer, a third via connecting the first connection wire to the first conductive layer, and a fourth via connecting the second connection wire to the first wiring layer.
Public/Granted literature
- US20130314838A1 Capacitive Device and Method for Fabricating the Same Public/Granted day:2013-11-28
Information query