Invention Grant
US08760904B2 One-Time Programmable memories using junction diodes as program selectors 有权
一次性使用结二极管作为程序选择器的可编程存储器

  • Patent Title: One-Time Programmable memories using junction diodes as program selectors
  • Patent Title (中): 一次性使用结二极管作为程序选择器的可编程存储器
  • Application No.: US13026771
    Application Date: 2011-02-14
  • Publication No.: US08760904B2
    Publication Date: 2014-06-24
  • Inventor: Shine C. Chung
  • Applicant: Shine C. Chung
  • Main IPC: G11C17/00
  • IPC: G11C17/00 H01L23/52
One-Time Programmable memories using junction diodes as program selectors
Abstract:
Junction diodes fabricated in standard CMOS logic processes can be used as program selectors for One-Time Programmable (OTP) devices, such as electrical fuse, contact/via fuse, contact/via anti-fuse, or gate-oxide breakdown anti-fuse, etc. The diode can be constructed by P+ and N+ active regions on an N well as the P and N terminals of the diode. The OTP device has an OTP element coupled to the diode. The OTP device can be used to construct a two-dimensional OTP memory with the N terminals of the diodes in a row connected as a wordline and the OTP elements in a column connected as a bitline.
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