Invention Grant
US08760904B2 One-Time Programmable memories using junction diodes as program selectors
有权
一次性使用结二极管作为程序选择器的可编程存储器
- Patent Title: One-Time Programmable memories using junction diodes as program selectors
- Patent Title (中): 一次性使用结二极管作为程序选择器的可编程存储器
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Application No.: US13026771Application Date: 2011-02-14
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Publication No.: US08760904B2Publication Date: 2014-06-24
- Inventor: Shine C. Chung
- Applicant: Shine C. Chung
- Main IPC: G11C17/00
- IPC: G11C17/00 ; H01L23/52

Abstract:
Junction diodes fabricated in standard CMOS logic processes can be used as program selectors for One-Time Programmable (OTP) devices, such as electrical fuse, contact/via fuse, contact/via anti-fuse, or gate-oxide breakdown anti-fuse, etc. The diode can be constructed by P+ and N+ active regions on an N well as the P and N terminals of the diode. The OTP device has an OTP element coupled to the diode. The OTP device can be used to construct a two-dimensional OTP memory with the N terminals of the diodes in a row connected as a wordline and the OTP elements in a column connected as a bitline.
Public/Granted literature
- US20120044740A1 ONE-TIME PROGRAMMABLE MEMORIES USING JUNCTION DIODES AS PROGRAM SELECTORS Public/Granted day:2012-02-23
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