Invention Grant
US08760920B2 Semiconductor memory device integrating flash memory and resistive/magnetic memory
有权
集成闪存和电阻/磁性存储器的半导体存储器件
- Patent Title: Semiconductor memory device integrating flash memory and resistive/magnetic memory
- Patent Title (中): 集成闪存和电阻/磁性存储器的半导体存储器件
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Application No.: US12982825Application Date: 2010-12-30
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Publication No.: US08760920B2Publication Date: 2014-06-24
- Inventor: Sook Joo Kim , Min Gyu Sung
- Applicant: Sook Joo Kim , Min Gyu Sung
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0100263 20101014
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A semiconductor memory device includes a first memory device formed on a semiconductor substrate, including a first storage unit, a source, and a drain, a second memory device, including a second storage unit, and a bit line, wherein the second memory device is connected in series between the bit line and the drain.
Public/Granted literature
- US20120092935A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-04-19
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