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US08760935B2 Nonvolatile semiconductor memory device 有权
非易失性半导体存储器件

Nonvolatile semiconductor memory device
Abstract:
A block dividing unit groups one-word lines into p groups, to divide a block into p divisional blocks. An erasing unit has an erasing operation performed on data stored in memory cells in a memory cell array, on a divisional block basis. An erasing verifying unit has an erasing verifying operation performed on memory cells subjected to the erasing operation, on a divisional block basis.
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