Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13407991Application Date: 2012-02-29
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Publication No.: US08760935B2Publication Date: 2014-06-24
- Inventor: Hideto Takekida
- Applicant: Hideto Takekida
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-043795 20110301
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A block dividing unit groups one-word lines into p groups, to divide a block into p divisional blocks. An erasing unit has an erasing operation performed on data stored in memory cells in a memory cell array, on a divisional block basis. An erasing verifying unit has an erasing verifying operation performed on memory cells subjected to the erasing operation, on a divisional block basis.
Public/Granted literature
- US20120224427A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-09-06
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