Invention Grant
US08760942B2 Resistive memory device capable of blocking a current flowing through a memory cell for fast quenching
有权
电阻式存储器件能够阻塞流过存储器单元的电流以进行快速淬火
- Patent Title: Resistive memory device capable of blocking a current flowing through a memory cell for fast quenching
- Patent Title (中): 电阻式存储器件能够阻塞流过存储器单元的电流以进行快速淬火
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Application No.: US13762428Application Date: 2013-02-08
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Publication No.: US08760942B2Publication Date: 2014-06-24
- Inventor: Young Hoon Oh , Young Don Choi , Ick Hyun Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0014762 20120214
- Main IPC: G11C7/22
- IPC: G11C7/22
Abstract:
A resistive memory device includes a plurality of first switches that connect word lines to a ground line in response a first switch control signal and a plurality of second switches that connect a plurality of global bit lines to a plurality of local bit lines corresponding to the plurality of global bit lines in response to a second switch control signal.
Public/Granted literature
- US20130208530A1 RESISTIVE MEMORY DEVICE, OPERATING METHOD, AND MEMORY SYSTEM Public/Granted day:2013-08-15
Information query
