Invention Grant
US08760949B2 Mechanisms for built-in self repair of memory devices using failed bit maps and obvious repairs
有权
使用故障位图和明显修复的内存设备内置自修复机制
- Patent Title: Mechanisms for built-in self repair of memory devices using failed bit maps and obvious repairs
- Patent Title (中): 使用故障位图和明显修复的内存设备内置自修复机制
-
Application No.: US13942040Application Date: 2013-07-15
-
Publication No.: US08760949B2Publication Date: 2014-06-24
- Inventor: Volodymyr Shvydun , Saman M. I. Adham
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A method of self-testing and self-repairing a random access memory (RAM) is includes collecting failure data of the RAM with redundant rows and columns, wherein the failure data of all failed cells of the RAM are stored in two failure bit map (FBM) data structures. The method further includes performing obvious repair of failed cells during the collecting of the failure data and analyzing the failure data in the two FBM data structure to determine repair methods. The method further includes repairing failed cells of the RAM by using the redundant rows and columns.
Public/Granted literature
- US20130301369A1 MECHANISMS FOR BUILT-IN SELF REPAIR OF MEMORY DEVICES USING FAILED BIT MAPS AND OBVIOUS REPAIRS Public/Granted day:2013-11-14
Information query
