A method of reading data in a non-volatile memory device compensates for a change in a reading/verifying result in accordance with a change of temperature. The method includes sensing a temperature of a memory cell, setting a first voltage and a second voltage of a bit line sensing signal in accordance with the sensed temperature so that a difference of the first voltage and the second voltage is increased as the temperature increases, precharging a bit line in accordance with the set first voltage, and sensing data of the memory cell in accordance with the set second voltage. The method may read/verify data constantly even though a temperature is changed.