Invention Grant
US08761218B2 Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes
有权
氮化镓氮化镓屏障和用于半极性平面III氮化物半导体的发光二极管和激光二极管的分离的限制异质结构(SCH)层
- Patent Title: Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes
- Patent Title (中): 氮化镓氮化镓屏障和用于半极性平面III氮化物半导体的发光二极管和激光二极管的分离的限制异质结构(SCH)层
-
Application No.: US13080260Application Date: 2011-04-05
-
Publication No.: US08761218B2Publication Date: 2014-06-24
- Inventor: You-Da Lin , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
- Applicant: You-Da Lin , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01S5/34
- IPC: H01S5/34 ; H01S5/343

Abstract:
A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.
Public/Granted literature
Information query