Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12956224Application Date: 2010-11-30
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Publication No.: US08763242B2Publication Date: 2014-07-01
- Inventor: Kenya Kawano , Chiko Yorita , Yuji Shirai
- Applicant: Kenya Kawano , Chiko Yorita , Yuji Shirai
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2009-271258 20091130
- Main IPC: H05K3/30
- IPC: H05K3/30 ; H05K3/00 ; H05K3/36 ; H01K3/22

Abstract:
In a method of manufacturing a semiconductor device, a second wiring substrate is stacked over a first wiring substrate using a conductive paste, where each wiring substrate has mounted thereon an electronic component. The conductive paste is hardened to form a metal column which forms an electrical connection between the first wiring substrate and the second wiring substrate. The wiring substrates are sealed with a resin. The semiconductor device can be downsized, thinned, and made highly reliable, and its manufacturing cost can be reduced. By using conductive paste for the electrical connection between the wiring substrates, a connecting pitch can be smaller than that in a connecting method of using a solder ball including Cu core, and a connection at low temperature can be achieved. Also, by coating the conductive paste by a print-coating or dispense-coating method, manufacturing is simplified and the manufacturing cost is reduced.
Public/Granted literature
- US20110128713A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-06-02
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