Invention Grant
- Patent Title: Semiconductor component
- Patent Title (中): 半导体元件
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Application No.: US13811156Application Date: 2011-07-21
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Publication No.: US08764462B2Publication Date: 2014-07-01
- Inventor: Sascha Dorok , Rudolf Lessmann , Tobias Canzler , Qiang Huang , Christiane Koehn
- Applicant: Sascha Dorok , Rudolf Lessmann , Tobias Canzler , Qiang Huang , Christiane Koehn
- Applicant Address: DE Dresden
- Assignee: Novaled AG
- Current Assignee: Novaled AG
- Current Assignee Address: DE Dresden
- Agency: Sutherland Asbill & Brennan LLP
- Priority: DE102010031979 20100722
- International Application: PCT/DE2011/075172 WO 20110721
- International Announcement: WO2012/022342 WO 20120223
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L29/08 ; H01L35/24 ; H01L51/00

Abstract:
The invention concerns a semiconductor component with a layered arrangement with an electrode, an organic semiconductor layer, an injection layer, and an additive layer, which consists of an additive, which on contact with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer, wherein in the injection layer a layered region is formed with a first doping affinity of the molecular doping material with respect to the organic material and a further layered region is formed with a second, in comparison to the first doping affinity smaller, doping affinity of the molecular doping material with respect to the organic material. Furthermore the invention concerns a method for the manufacture of a semiconductor component and also the application of a semiconductor component.
Public/Granted literature
- US20130210192A1 Semiconductor Component Public/Granted day:2013-08-15
Information query
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