Invention Grant
US08764999B2 Sidewall image transfer pitch doubling and inline critical dimension slimming
有权
侧壁图像传输俯仰倍增和内联临界尺寸减肥
- Patent Title: Sidewall image transfer pitch doubling and inline critical dimension slimming
- Patent Title (中): 侧壁图像传输俯仰倍增和内联临界尺寸减肥
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Application No.: US13158899Application Date: 2011-06-13
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Publication No.: US08764999B2Publication Date: 2014-07-01
- Inventor: Shannon W. Dunn , Dave Hetzer
- Applicant: Shannon W. Dunn , Dave Hetzer
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/302 ; G03F7/40 ; G03F7/00 ; H01L21/027 ; H01L21/033
Abstract:
A method for patterning a substrate is described. The patterning method may include performing a lithographic process to produce a pattern and a critical dimension (CD) slimming process to reduce a CD in the pattern to a reduced CD. Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique.
Public/Granted literature
- US20120128935A1 SIDEWALL IMAGE TRANSFER PITCH DOUBLING AND INLINE CRITICAL DIMENSION SLIMMING Public/Granted day:2012-05-24
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