Invention Grant
- Patent Title: Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance
- Patent Title (中): 单晶半导体衬底的纹理化以减少入射光反射率
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Application No.: US13597244Application Date: 2012-08-28
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Publication No.: US08765001B2Publication Date: 2014-07-01
- Inventor: Michael P. Toben , Robert K. Barr , Corey O'Connor
- Applicant: Michael P. Toben , Robert K. Barr , Corey O'Connor
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent John J. Piskorski
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
Monocrystalline semiconductor substrates are textured with alkaline solutions to form pyramid structures on their surfaces to reduce incident light reflectance and improve light absorption of the wafers. The alkaline baths include hydantoin compounds and derivatives thereof in combination with alkoxylated glycols to inhibit the formation of flat areas between pyramid structures to improve the light absorption.
Public/Granted literature
- US20140065836A1 TEXTURING OF MONOCRYSTALLINE SEMICONDUCTOR SUBSTRATES TO REDUCE INCIDENT LIGHT REFLECTANCE Public/Granted day:2014-03-06
Information query
