Invention Grant
- Patent Title: Tablet for vapor deposition and method for producing the same
- Patent Title (中): 气相沉积用片剂及其制造方法
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Application No.: US13386118Application Date: 2010-06-17
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Publication No.: US08765026B2Publication Date: 2014-07-01
- Inventor: Azusa Oshiro
- Applicant: Azusa Oshiro
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Metal Mining Co., Ltd.
- Current Assignee: Sumitomo Metal Mining Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2009-184177 20090807; JP2010-038318 20100224
- International Application: PCT/JP2010/060698 WO 20100617
- International Announcement: WO2011/016297 WO 20110210
- Main IPC: H01B1/02
- IPC: H01B1/02 ; H01B1/08

Abstract:
A tablet for vapor deposition characterized in that on a fracture surface of an indium oxide sintered body, the percentage of crystal grains having a grain diameter corresponding to a highest peak is 20% or less. The tablet is produced by: mixing indium oxide powder and cerium oxide powder, and subjecting the mixture to a heat treatment at 1300° C. to 1550° C. to calcine; mixing an uncalcined indium oxide powder and/or an uncalcined cerium oxide powder with the obtained calcined powder such that the ratio of the calcined powder is 50% to 80% by mass, followed by granulation; and molding the obtained granulated powder, thereby forming a molded body, and then sintering the molded body at a temperature which is 1100° C. to 1350° C., and which is lower than the temperature of the heat treatment on the calcined powder in the first step by 20° C. or more.
Public/Granted literature
- US20120241696A1 TABLET FOR VAPOR DEPOSITION AND METHOD FOR PRODUCING THE SAME Public/Granted day:2012-09-27
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