Invention Grant
US08765028B2 Composition for oxide thin film, method of preparing the composition, method of forming the oxide thin film, and electronic device using the composition
有权
用于氧化物薄膜的组合物，制备组合物的方法，形成氧化物薄膜的方法和使用该组合物的电子器件
- Patent Title: Composition for oxide thin film, method of preparing the composition, method of forming the oxide thin film, and electronic device using the composition
- Patent Title (中): 用于氧化物薄膜的组合物，制备组合物的方法，形成氧化物薄膜的方法和使用该组合物的电子器件
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Application No.: US13114353Application Date: 2011-05-24
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Publication No.: US08765028B2Publication Date: 2014-07-01
- Inventor: Hyun Jae Kim , You Seung Rim , Dong Lim Kim
- Applicant: Hyun Jae Kim , You Seung Rim , Dong Lim Kim
- Applicant Address: KR Seoul
- Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: KR Seoul
- Agency: Carter, DeLuca, Farrell & Schmidt, LLP
- Priority: KR10-2010-0083136 20100826
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01B1/08 ; H01B1/02
Abstract:
Provided are a composition for an oxide semiconductor, a method of preparing the composition, methods of forming an oxide semiconductor thin film and an electronic device using the composition. The composition for an oxide semiconductor includes a tin compound, a zinc compound, and a low electronegativity metal compound containing a metal with an electronegativity lower than zinc.
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