Invention Grant
- Patent Title: Method of producing a semiconductor
- Patent Title (中): 制造半导体的方法
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Application No.: US13236391Application Date: 2011-09-19
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Publication No.: US08765036B2Publication Date: 2014-07-01
- Inventor: John Carberry
- Applicant: John Carberry
- Applicant Address: US TN Jefferson City
- Assignee: Mossey Creek Solar, LLC
- Current Assignee: Mossey Creek Solar, LLC
- Current Assignee Address: US TN Jefferson City
- Agency: Pitts & Lake, P.C.
- Main IPC: B29C47/00
- IPC: B29C47/00
Abstract:
A method for manufacturing a semiconductor is disclosed. A mold is providing having an interior defining a planar capillary space. A measure of precursor is placed in fluid communication with the capillary space. The precursor is then melted, and the melted precursor is allowed to flow into the capillary space. The melted precursor is then allowed to cool to form a semiconductor.
Public/Granted literature
- US20120007268A1 Method of Producing a Semiconductor Public/Granted day:2012-01-12
Information query
