Invention Grant
- Patent Title: Method of manufacturing a p-AlGaN layer
- Patent Title (中): 制造p-AlGaN层的方法
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Application No.: US13512747Application Date: 2010-12-10
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Publication No.: US08765222B2Publication Date: 2014-07-01
- Inventor: Yoshikazu Ooshika , Tetsuya Matsuura
- Applicant: Yoshikazu Ooshika , Tetsuya Matsuura
- Applicant Address: JP Tokyo
- Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2009-280963 20091210; JP2010-275128 20101209
- International Application: PCT/JP2010/072728 WO 20101210
- International Announcement: WO2011/071191 WO 20110616
- Main IPC: C23C16/34
- IPC: C23C16/34
Abstract:
The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (0
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