Invention Grant
US08765223B2 Binary and ternary metal chalcogenide materials and method of making and using same
有权
二元和三元金属硫属化物材料及其制造和使用方法
- Patent Title: Binary and ternary metal chalcogenide materials and method of making and using same
- Patent Title (中): 二元和三元金属硫属化物材料及其制造和使用方法
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Application No.: US12425821Application Date: 2009-04-17
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Publication No.: US08765223B2Publication Date: 2014-07-01
- Inventor: Manchao Xiao , Liu Yang
- Applicant: Manchao Xiao , Liu Yang
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Rosaleen P. Morris-Oskanian; Lina Yang
- Main IPC: C01B19/00
- IPC: C01B19/00 ; C23C16/08 ; C23C16/16 ; C23C16/18 ; C07F7/08 ; C07F7/30
Abstract:
This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
Public/Granted literature
- US20090280052A1 Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same Public/Granted day:2009-11-12
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