Invention Grant
- Patent Title: Reducing edge die reflectivity in extreme ultraviolet lithography
- Patent Title (中): 在极紫外光刻中降低边缘模具反射率
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Application No.: US13587970Application Date: 2012-08-17
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Publication No.: US08765331B2Publication Date: 2014-07-01
- Inventor: Emily E. Gallagher , Gregory R. McIntyre
- Applicant: Emily E. Gallagher , Gregory R. McIntyre
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Richard Kotulak
- Main IPC: G03F1/38
- IPC: G03F1/38 ; G03F1/24 ; H01L21/027
Abstract:
Extreme ultraviolet lithography (EUVL) masks and methods of manufacturing are provided. A method includes forming a sub-resolution phase shift grating in a multilayer reflective film beneath a border region of an absorber layer of an extreme ultraviolet lithography (EUVL) mask. The sub-resolution phase shift grating reduces a reflectivity of the border region of the mask.
Public/Granted literature
- US20140051015A1 REDUCING EDGE DIE REFLECTIVITY IN EXTREME ULTRAVIOLET LITHOGRAPHY Public/Granted day:2014-02-20
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