Invention Grant
US08765363B2 Method of forming a resist pattern with multiple post exposure baking steps
有权
用多次曝光后烘烤步骤形成抗蚀剂图案的方法
- Patent Title: Method of forming a resist pattern with multiple post exposure baking steps
- Patent Title (中): 用多次曝光后烘烤步骤形成抗蚀剂图案的方法
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Application No.: US13478559Application Date: 2012-05-23
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Publication No.: US08765363B2Publication Date: 2014-07-01
- Inventor: Chung-Ming Wang , Yu Lun Liu , Chia-Chu Liu , Kuei-Shun Chen
- Applicant: Chung-Ming Wang , Yu Lun Liu , Chia-Chu Liu , Kuei-Shun Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/38
- IPC: G03F7/38
Abstract:
A method of forming a integrated circuit pattern. The method includes coating a photoresist layer on a substrate; performing a lithography exposure process to the photoresist layer; performing a multiple-step post-exposure-baking (PEB) process to the photoresist layer; and developing the photoresist layer to form a patterned photoresist layer.
Public/Granted literature
- US20130316510A1 METHOD OF FORMING A RESIST PATTERN WITH MULTIPLE POST EXPOSURE BAKING STEPS Public/Granted day:2013-11-28
Information query
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