Invention Grant
US08765490B2 Semiconductor magnetoresistive random-access memory (MRAM) device and manufacturing method thereof
有权
半导体磁阻随机存取存储器（MRAM）器件及其制造方法
- Patent Title: Semiconductor magnetoresistive random-access memory (MRAM) device and manufacturing method thereof
- Patent Title (中): 半导体磁阻随机存取存储器（MRAM）器件及其制造方法
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Application No.: US13654321Application Date: 2012-10-17
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Publication No.: US08765490B2Publication Date: 2014-07-01
- Inventor: Gavin Zeng
- Applicant: Semiconductor Manufacturing International Corporation (Shanghai) , Semiconductor Manufacturing International Corporation (Beijing)
- Applicant Address: CN CN
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN CN
- Agency: Innovation Counsel LLP
- Priority: CN201110360297 20111115
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
The present disclosure describes a semiconductor MRAM device and a manufacturing method. The device reduces magnetic field induction “interference” (disturbance) phenomenon between adjacent magnetic tunnel junctions when data is written and read. This semiconductor MRAM device comprises a magnetic tunnel junction unit and a magnetic shielding material layer covering the sidewalls of the magnetic tunnel junction unit. The method for manufacturing a semiconductor device comprises: forming a magnetic tunnel junction unit, depositing an isolation dielectric layer to cover the top and the sidewall of the magnetic tunnel junction unit, and depositing a magnetic shielding material layer on the isolation dielectric layer.
Public/Granted literature
- US20130119496A1 Semiconductor Magnetoresistive Random-access Memory (MRAM) Device and Manufacturing Method thereof Public/Granted day:2013-05-16
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