Invention Grant
US08765501B2 Formation of group III-V material layers on patterned substrates
有权
在图案化基板上形成III-V族III族材料层
- Patent Title: Formation of group III-V material layers on patterned substrates
- Patent Title (中): 在图案化基板上形成III-V族III族材料层
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Application No.: US13036261Application Date: 2011-02-28
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Publication No.: US08765501B2Publication Date: 2014-07-01
- Inventor: Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
- Applicant: Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
Public/Granted literature
- US20110210425A1 FORMATION OF GROUP III-V MATERIAL LAYERS ON PATTERNED SUBSTRATES Public/Granted day:2011-09-01
Information query
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