Invention Grant
- Patent Title: Manufacturing method of light emitting device
- Patent Title (中): 发光装置的制造方法
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Application No.: US13947123Application Date: 2013-07-22
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Publication No.: US08765506B2Publication Date: 2014-07-01
- Inventor: Chao-Shun Yang , Chen-Ming Hu
- Applicant: Au Optronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100146506A 20111215
- Main IPC: H01L31/0328
- IPC: H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109

Abstract:
A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.
Public/Granted literature
- US20130309787A1 MANUFACTURING METHOD OF LIGHT EMITTING DEVICE Public/Granted day:2013-11-21
Information query
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