Invention Grant
US08765510B2 Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
有权
通过纵向比例捕获与聚结膜制造的半导体二极管
- Patent Title: Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
- Patent Title (中): 通过纵向比例捕获与聚结膜制造的半导体二极管
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Application No.: US13650206Application Date: 2012-10-12
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Publication No.: US08765510B2Publication Date: 2014-07-01
- Inventor: Anthony J. Lochtefeld
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
A photonic device comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region. The device further includes a top diode material and an active diode region between the top and bottom diode materials.
Public/Granted literature
- US20130034924A1 Semiconductor Diodes Fabricated by Aspect Ratio Trapping with Coalesced Films Public/Granted day:2013-02-07
Information query
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