Invention Grant
US08765522B2 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
有权
叠层氧化物材料，半导体器件以及半导体器件的制造方法
- Patent Title: Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
- Patent Title (中): 叠层氧化物材料，半导体器件以及半导体器件的制造方法
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Application No.: US12951225Application Date: 2010-11-22
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Publication No.: US08765522B2Publication Date: 2014-07-01
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-270855 20091128
- Main IPC: H01L21/16
- IPC: H01L21/16 ; H01L29/12 ; H01L29/786 ; H01L21/02 ; H01L29/66
Abstract:
One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming a first oxide component over a base component, causing crystal growth which proceeds from a surface toward an inside of the first oxide component by first heat treatment to form a first oxide crystal component at least partly in contact with the base component, forming a second oxide component over the first oxide crystal component; and causing crystal growth by second heat treatment using the first oxide crystal component as a seed to form a second oxide crystal component.
Public/Granted literature
- US20110127579A1 STACKED OXIDE MATERIAL, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2011-06-02
Information query
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