Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14067717Application Date: 2013-10-30
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Publication No.: US08765529B2Publication Date: 2014-07-01
- Inventor: Naomi Masuda
- Applicant: Spansion LLC
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Priority: JP2006353412 20061227
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L21/60 ; H01L23/498 ; H01L23/522
Abstract:
A semiconductor device includes a semiconductor chip, a connection electrode including a first land electrode electrically coupled with the semiconductor chip, and a through electrode formed on an upper surface of the first land electrode to be electrically coupled with the first land electrode using a stud bump, and a sealing resin, through which the connection electrode passes, for sealing the semiconductor chip.
Public/Granted literature
- US20140094001A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-04-03
Information query
IPC分类:
