Invention Grant
US08765534B2 Method for improved mobility using hybrid orientation technology (HOT) in conjunction with selective epitaxy and related apparatus
有权
使用混合取向技术（HOT）与选择性外延和相关设备相结合的改进移动性的方法
- Patent Title: Method for improved mobility using hybrid orientation technology (HOT) in conjunction with selective epitaxy and related apparatus
- Patent Title (中): 使用混合取向技术（HOT）与选择性外延和相关设备相结合的改进移动性的方法
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Application No.: US13762656Application Date: 2013-02-08
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Publication No.: US08765534B2Publication Date: 2014-07-01
- Inventor: Alexander H. Owens
- Applicant: National Semiconductor Corporation
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/84 ; H01L21/762
Abstract:
A semiconductor apparatus includes a first substrate and a second substrate located over a first portion of the first substrate and separated from the first substrate by a buried layer. The semiconductor apparatus also includes an epitaxial layer located over a second portion of the first substrate and isolated from the second substrate. The semiconductor apparatus further includes a first transistor formed at least partially in the second substrate and a second transistor formed at least partially in or over the epitaxial layer. The second substrate and the epitaxial layer have bulk properties with different electron and hole mobilities. At least one of the transistors is configured to receive one or more signals of at least about 5V. The first substrate could have a first crystalline orientation, and the second substrate could have a second crystalline orientation.
Public/Granted literature
- US20130157424A1 Method for improved mobility using hybrid orientaion technology (HOT) in conjunction with Public/Granted day:2013-06-20
Information query
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