Invention Grant
- Patent Title: Method for manufacturing a capacitor having a yttrium oxide layer
- Patent Title (中): 具有氧化钇层的电容器的制造方法
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Application No.: US13278654Application Date: 2011-10-21
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Publication No.: US08765535B2Publication Date: 2014-07-01
- Inventor: Kengo Akimoto
- Applicant: Kengo Akimoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-250356 20070927
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/8242 ; H01L21/30 ; H01L21/46
Abstract:
In the method for manufacturing a semiconductor device of the invention, a bonding layer is formed over a substrate, an insulating film and a storage capacitor portion lower electrode are formed over the bonding layer, a single crystal silicon layer is formed over the insulating film, a storage capacitor portion insulating film is formed over the storage capacitor portion lower electrode, a wiring is formed over the storage capacitor portion insulating film, a channel forming region and a low concentration impurity region are formed over the single crystal silicon layer, and a gate insulating film and a gate electrode are formed over the single crystal silicon layer. The storage capacitor portion insulating film is formed by depositing a YSZ film with a single crystal silicon layer used as a base film, whereby the permittivity increases and thus the leakage current from the storage capacitor portion is suppressed.
Public/Granted literature
- US20120058612A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-03-08
Information query
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