A method of making a monolithic three dimensional NAND string includes forming a stack of alternating layers of a first layer and a second layer over a substrate, where the first layer includes a conductive or semiconductor control gate material and the second layer includes an insulating material. The method also includes etching the stack to form at least one opening in the stack, selectively etching the first layer to form first recesses, forming a conductive or semiconductor liner having a clam shape in the first recesses, forming a blocking dielectric over the conductive or semiconductor liner in the first recesses, forming a plurality of discrete charge storage segments separated from each other in the first recesses over the blocking dielectric, forming a tunnel dielectric over a side wall of the discrete charge storage segments exposed in the at least one opening, and forming a semiconductor channel in the opening.