Invention Grant
- Patent Title: Compound semiconductor device and method for manufacturing the same
- Patent Title (中): 复合半导体器件及其制造方法
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Application No.: US13325972Application Date: 2011-12-14
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Publication No.: US08765554B2Publication Date: 2014-07-01
- Inventor: Tadahiro Imada , Toshihide Kikkawa
- Applicant: Tadahiro Imada , Toshihide Kikkawa
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2011-039921 20110225
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A gate electrode is formed so as to embed an electrode material in a recess for an electrode, which has been formed in a structure of stacked compound semiconductors, through a gate insulation film, and also a field plate electrode that comes in Schottky contact with the structure of the stacked compound semiconductors is formed by embedding an electrode material in a recess for an electrode, which has been formed in the structure of the stacked compound semiconductors so that the field plate electrode directly comes in contact with the structure of the stacked compound semiconductors at least on the bottom face of the recess for the electrode.
Public/Granted literature
- US20120220089A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-08-30
Information query
IPC分类:
