Invention Grant
US08765555B2 Phase change memory cells and methods of forming phase change memory cells
有权
相变存储器单元和相变存储器单元的形成方法
- Patent Title: Phase change memory cells and methods of forming phase change memory cells
- Patent Title (中): 相变存储器单元和相变存储器单元的形成方法
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Application No.: US13460356Application Date: 2012-04-30
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Publication No.: US08765555B2Publication Date: 2014-07-01
- Inventor: Damon E. Van Gerpen
- Applicant: Damon E. Van Gerpen
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A phase change memory cell includes a first electrode having a cylindrical portion. A dielectric material having a cylindrical portion is longitudinally over the cylindrical portion of the first electrode. Heater material is radially inward of and electrically coupled to the cylindrical portion of the first electrode. Phase change material is over the heater material and a second electrode is electrically coupled to the phase change material. Other embodiments are disclosed, including methods of forming memory cells which include first and second electrodes having phase change material and heater material in electrical series there-between.
Public/Granted literature
- US20130285003A1 Phase Change Memory Cells And Methods Of Forming Phase Change Memory Cells Public/Granted day:2013-10-31
Information query
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