Invention Grant
- Patent Title: Manufacturable high-k DRAM MIM capacitor structure
- Patent Title (中): 可制造的高k DRAM MIM电容器结构
-
Application No.: US13494808Application Date: 2012-06-12
-
Publication No.: US08765570B2Publication Date: 2014-07-01
- Inventor: Sandra Malhotra , Wim Deweerd , Hiroyuki Ode
- Applicant: Sandra Malhotra , Wim Deweerd , Hiroyuki Ode
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first dielectric material is formed above a first electrode material. The first electrode material is rigid and has good mechanical strength and serves as a robust frame for the capacitor stack. The first dielectric material is sufficiently thin ( 3 nm) or lightly doped or non-doped so that it crystallizes after subsequent anneal treatments. A second electrode material is formed adjacent to the second dielectric material. The second electrode material has a high work function and a crystal structure that serves to promote the formation of the high k-value crystal structure of the second dielectric material.
Public/Granted literature
- US20130330903A1 MANUFACTURABLE HIGH-K DRAM MIM CAPACITOR STRUCTURE Public/Granted day:2013-12-12
Information query
IPC分类:
