Invention Grant
- Patent Title: Air gap formation
- Patent Title (中): 气隙形成
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Application No.: US13229673Application Date: 2011-09-10
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Publication No.: US08765573B2Publication Date: 2014-07-01
- Inventor: Abhijit Basu Mallick , Nitin Ingle
- Applicant: Abhijit Basu Mallick , Nitin Ingle
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; H01L21/02 ; H01L21/764

Abstract:
A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features.
Public/Granted literature
- US20120070957A1 AIR GAP FORMATION Public/Granted day:2012-03-22
Information query
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