Invention Grant
- Patent Title: Method for extreme ultraviolet electrostatic chuck with reduced clamp effect
- Patent Title (中): 减少夹具效应的极紫外线静电卡盘的方法
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Application No.: US13602618Application Date: 2012-09-04
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Publication No.: US08765582B2Publication Date: 2014-07-01
- Inventor: Chia-Hao Hsu , Chia-Chen Chen , Tzung-Chi Fu , Tzu-Wei Kao , Yu Chao Lin
- Applicant: Chia-Hao Hsu , Chia-Chen Chen , Tzung-Chi Fu , Tzu-Wei Kao , Yu Chao Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3215
Abstract:
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.
Public/Granted literature
- US20140061655A1 METHOD FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT Public/Granted day:2014-03-06
Information query
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