Invention Grant
US08765594B2 Method of fabricating semiconductor device allowing smooth bump surface
失效
制造半导体器件的方法允许光滑的凸起表面
- Patent Title: Method of fabricating semiconductor device allowing smooth bump surface
- Patent Title (中): 制造半导体器件的方法允许光滑的凸起表面
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Application No.: US13167448Application Date: 2011-06-23
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Publication No.: US08765594B2Publication Date: 2014-07-01
- Inventor: Yoshihiro Kitamura
- Applicant: Yoshihiro Kitamura
- Agency: Young & Thompson
- Priority: JP2010-143754 20100624
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
A method of fabricating a semiconductor device, includes: removing, after forming solder for forming a plurality of bumps on a semiconductor substrate, an oxide film formed on a surface of the solder while heating the semiconductor substrate with first radiant heat; and heating the semiconductor substrate with an amount of second radiant heat that is greater than the amount of the first radiant heat by holding the semiconductor substrate at a position apart from a front surface of a heater stage at a predetermined distance to reflow the solder from which the oxide film is removed.
Public/Granted literature
- US20110318918A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE ALLOWING SMOOTH BUMP SURFACE Public/Granted day:2011-12-29
Information query
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