Invention Grant
- Patent Title: Surface treatment for a fluorocarbon film
- Patent Title (中): 氟碳膜的表面处理
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Application No.: US13138242Application Date: 2010-01-22
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Publication No.: US08765605B2Publication Date: 2014-07-01
- Inventor: Masahiro Horigome , Takuya Kurotori , Yasuo Kobayashi , Takaaki Matsuoka , Toshihisa Nozawa
- Applicant: Masahiro Horigome , Takuya Kurotori , Yasuo Kobayashi , Takaaki Matsuoka , Toshihisa Nozawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- International Application: PCT/JP2010/000347 WO 20100122
- International Announcement: WO2010/084759 WO 20100729
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.
Public/Granted literature
- US20110318919A1 SURFACE TREATMENT FOR A FLUOROCARBON FILM Public/Granted day:2011-12-29
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